- 您现在的位置：买卖IC网 > Sheet目录142 > RF201L2STE25 (Rohm Semiconductor)DIODE FAST REC 200V 2.0A SOD-106
              www.rohm.com ? 2013 ROHM Co., Ltd. All rights reserved. DataSheet RF201L2S 50 60 70 80 90 100 110 120 130 140 150 AVE:102.3pF f=1MHz VR=0V 0 0.5 1 1.5 2 2.5 3 01234 DC Sin(θ＝180) D=1/2 1 10 100 1000 110100 8.3ms 8.3ms Ifsm 1cyc 0 5 10 15 20 25 30 AVE:14.3ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 0 10 20 30 40 50 60 70 80 90 100 Ta=25℃ VR=200V n=30pcs AVE:16.6ns 0 50 100 150 200 250 AVE:108.0A 800 810 820 830 840 850 AVE:815.3mV 1 10 100 1000 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 110100TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) f=1MHz Ta=25℃ IF=2A n=30pcs FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.001 0.01 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 150℃ 25℃ 75℃ 125℃ -25℃ 0.1 1 10 100 1000 10000 0 50 100 150 200 25℃ 75℃ -25℃ 125℃ 150℃ 8.3ms Ifsm 1cyc 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1m IM=10m A IF=100mA 300u time 0 50 100 150 200 t Ifsm Mounted on epoxy board 2/3 2013.08 Rev.C |